A Noise Immune Double Suspended Gate MOSFET for Ultra Low-Power Applications
نویسندگان
چکیده
The purpose of this paper is to develop the design and analytical modelling a noise immune double suspended gate MOSFET (DSG-MOSFET) for ultra-low power applications. Also, important performance parameters proposed structure such as pull-in pull-out voltages have been thoroughly investigated with respect valuable structural parameters. methodology used EKV based approach calculate ingeniously developed boundary conditions which helps achieving reasonably accurate result. I-V characteristics has modelled justify accuracy. experimental result shows that are in millivolts microvolts range hence it can be As ratio between voltage 10^(+3) range, justifies immune. ID-VGS characteristic hysteresis sharp transition indicates an ideal switch infinite sub-threshold slope. This presents compact DSG-MOFET predict device similar simulated results. first time immunity DSGMOSFET analyzed.
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ژورنال
عنوان ژورنال: Silicon
سال: 2021
ISSN: ['1876-9918', '1876-990X']
DOI: https://doi.org/10.1007/s12633-021-01283-1